MIG20J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI (silicon-on-insulator) process drives these directly in response to a PWM signal. Moreover, since high-voltage level-shifter is built in high-voltage IC, while being able to perform a direct drive without the interface with which the upper arm IGBT is insulated, the drive power supply of an upper arm can be driven with a bootstrap system, and the simplification of a system is possible. Furthermore, each lower arm emitter terminal has been independent so that detection can perform current detection at the time of vector control by current detection resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and Over Temperature Protection. Original high thermal conduction resin is adopted as a package, and low heat resistance is realized. Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • The level shift circuit by high-voltage IC is built in. • The simplification of a high side driver power supply is possible by the bootstrap system. • Short circuit protection, over temperature protection, and the power supply under voltage protection function are built in. • Short circuit protection and over temperature protection state are outputted. • The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control. • Low thermal resistance by adoption of original high thermal conduction resin. |
